High-resistivity resistive layer study (2016 - 2018)

Institute of Solid State Physics of the University of Latvia (ISSP UL) implements the research project "Growth and Employment" within the framework of the second selection procedure for projects of Operational Program 1.2.1. specific support objective "Increase private sector investment in R & D", measure 1.2.1.1. "Support for the development of new products and technologies within the competence centers".

Project Nr. 1.2.1.1/16/A/002

Scientific supervisor: Professor, Dr.habil.phys. Ivars Tāle

Reducing the size of the chips while increasing their working capacity is directly dependent on the small size precision resistive materials that can be created. The resistive materials are sputtered as an extremely thin layer (several hundreds of angstroms (10-10m)), producing a conductive layer and a resistive layer.

The aim of the project is to carry out research and acquire knowledge about the possibilities of creating high-resistance resistive elements with reduced dimensions and high resistive values. Upon reaching the goal of the study, knowledge of the development of high resistance (≥ 5kΩ) resistors with TCR ≤50ppm / C ° will create opportunities for the development of principally new products - analogue chips with integrated high-value resistors. The goal of the project is also to get knowledge about the methods, regimes and residual layers of metal silicide thin-layer coating methods. The acquired knowledge and the development of a new product based on it will help increase the range of products by offering customers a higher quality and precision analogue chips.
 

During the project development:

  • Knowledge has been gained and optimal metallic silicon alloy compositions have been selected to produce high-resistance resistive layers (in the thickness range of 10 nm).
  • Examined ion plasma sputtering methods and their modes for obtaining high-resistance metallic silicide layers by controlling the properties of the layers, surface properties and electrical parameters.
  • Gained knowledge of how the properties of the surface of the resistor layer and the electrical parameters change with the change of their after-treatment modes, the burning temperature and the composition of the gases.
  • Tested changes in properties of the resistive layer by changing their processing temperature settings. A critical assessment was made of the sputtering and heat treatment of various interlayers (including AlN) to the crystallization processes and surface properties of these layers.