Modelling defects and defect processes in the bulk and at surfaces of oxides
The purpose of this lecture course is to give an overview of applications of the state-of-the art computational methods to modelling defects and defect processes in oxide materials for different applications.
Pirmdien, 27. septembrī plkst. 14:30
Lecture 1: Models of defects in amorphous silica
This lecture will focus on the methods for modelling defects in amorphous materials and will use amorphous silica as an example to demonstrate the development of defect models in this material. It will discuss the role of oxygen-deficient defects in opto- and micro-electronics devices.
Pirmdien, 27. septembrī plkst. 16:30
Lecture 2: Defects in high-k dielectrics for microelectronics
This lecture will focus on challenges and results of modelling defects and defect processes in novel polycrystalline oxides and interfaces in microelectronic devices. It will consider defects in the bulk and at grain boundaries of HfO2 and ZrO2 and their interfaces with metals and silicon.
Otrdien, 28. septembrī plkst. 14:30
Lecture 3: Photo-induced defect processes at oxide surfaces and interfaces
This lecture will describe the mechanisms of photo-induced desorption of oxide surfaces and will use MgO and CaO as examples. It will demonstrate how one can use photons to selectively excite and desorb atoms at oxide surfaces.
Otrdien, 28. septembrī plkst. 16:00
Lecture 4: Imaging and manipulating surface defects using Atomic Force Microscopy
This lecture will describe the mechanisms of contrast formation in Atomic Force Microscopy and will show how AFM can be used to image and manipulate defects at oxide surfaces. It will describe a multi-scale approach to modelling complex processes at surfaces.
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