Identification number: 1.1.1.3/1./24/A/020
Type: European Regional Development Fund (ERDF)
Duration: 01.06.2025 - 31.05.2028.
Project Leader: Dr. Edgars Butanovs, Institute of Solid State Physics University of Latvia (ISSP UL)
Project partners: AGL Technologies, RD ALFA Microelectronics
Total funding: 651 600 EUR
ERDF funding: 506 049 EUR
Project description:
The objective of this industrial research project is to develop novel solar-blind far-UV light photodetector based on amorphous Aluminium Gallium Oxide (AlGaO) alloy semiconductor thin film deposited via scalable high-deposition-rate magnetron sputtering technique (GoFarUV). We propose to produce and investigate novel AlGaO semiconductor materials, and optimize their synthesis conditions to achieve photoelectric properties suitable for far UV light detection.
Applications of such solar-blind UV-C photodetectors include environmental monitoring and space weather research, both of which are vital for addressing global climate challenges. The detectors will enable more accurate monitoring of atmospheric changes, namely ozone formation studies, and early wildfire detection, providing critical data for mitigating the impacts of climate change. Other applications include space science and technologies, security, and military.
The project will be implemented by the Institute of Solid State Physics, University of Latvia (ISSP UL, leading partner, principal investigator Dr. Edgars Butanovs), a thin film coatings company AGL Technologies (SME, Partner No. 1), and microelectronics producer and developer RD ALFA Microelectronics (SME, Partner No. 2). This interdisciplinary project consists of research activities in Physical (1.3) and Chemical (1.4) sciences, Electrical engineering, electronics, information, and communication technologies (2.2), and Materials science (2.5).
Project’s products:
Novel reactive direct-current magnetron co-sputtering process for amorphous AlGaO thin film deposition on rigid and flexible substrates for use in UV-C photosensors (patent application);
New knowledge on the underlying physical phenomena governing the deposition process parameter relation to optical and photoelectrical properties of the films for optimization of AlGaO film photoresponsivity performance (scientific papers);
Innovative packaging solutions for integration of the developed semiconductor chips, suitable for UV-C sensing down to 200 nm wavelength, including back-side illumination option (prototype demonstration).
Our proposed approach brings significant innovation to the field, utilizing relatively green, high-deposition-rate semiconductor growth technique for solar-blind photodetectors with peak responsivity further into UV-C range. The implementation of the project will significantly enhance Latvia’s innovation capacity by developing cutting-edge photodetectors based on amorphous AlGaO thin films. This technology will open new market opportunities and strengthen the competitiveness of Latvian companies in high-value industries such as space technologies, environmental monitoring, and optoelectronics. The GoFarUV goals promotes high-value products and services, boosting energy efficiency, and advancing Latvia’s knowledge base and human capital. By fostering collaboration between a research institution and two private companies, the project will support the growth of R&D capabilities and increase Latvia’s ability to export advanced technologies.
GoFarUV is directly related to the RIS3 specialization field “Photonics and smart materials, technologies and engineering systems” and supports the sectors (Directions 1, 2 and 3) of future growth, where products and services with a high added value exist or could appear. It will promote development of innovations in several RIS3 sectors, such as C.26 and C.27 (NACE classification).
The project is related to non-economic activity, and combines fundamental and industrial research. The research team will consist of senior and young researchers, STEM students, and industry experts. The total eligible cost is 651 600 EUR with ERDF contribution of 506 049 EUR. The duration of the project is 36 months (01.06.2025 – 31.05.2028). Mid-term of the project: 18 months after the start of the project.