Identification number: 1.1.1.3/1./24/A/020
Type: European Regional Development Fund (ERDF)
Duration: 01.06.2025 - 31.05.2028.
Project Leader: Dr. Edgars Butanovs, Institute of Solid State Physics University of Latvia (ISSP UL)
Project partners: AGL Technologies, RD ALFA Microelectronics
Total funding: 651 600 EUR
ERDF funding: 506 049 EUR
Project description:
The objective of this industrial research project is to develop novel solar-blind far-UV light photodetector based on amorphous Aluminium Gallium Oxide (AlGaO) alloy semiconductor thin film deposited via scalable high-deposition-rate magnetron sputtering technique (GoFarUV). We propose to produce and investigate novel AlGaO semiconductor materials, and optimize their synthesis conditions to achieve photoelectric properties suitable for far UV light detection.
Applications of such solar-blind UV-C photodetectors include environmental monitoring and space weather research, both of which are vital for addressing global climate challenges. The detectors will enable more accurate monitoring of atmospheric changes, namely ozone formation studies, and early wildfire detection, providing critical data for mitigating the impacts of climate change. Other applications include space science and technologies, security, and military.
The project will be implemented by the Institute of Solid State Physics, University of Latvia (ISSP UL, leading partner, principal investigator Dr. Edgars Butanovs), a thin film coatings company AGL Technologies (SME, Partner No. 1), and microelectronics producer and developer RD ALFA Microelectronics (SME, Partner No. 2). This interdisciplinary project consists of research activities in Physical (1.3) and Chemical (1.4) sciences, Electrical engineering, electronics, information, and communication technologies (2.2), and Materials science (2.5).
Project’s products:
Novel reactive direct-current magnetron co-sputtering process for amorphous AlGaO thin film deposition on rigid and flexible substrates for use in UV-C photosensors (patent application);
New knowledge on the underlying physical phenomena governing the deposition process parameter relation to optical and photoelectrical properties of the films for optimization of AlGaO film photoresponsivity performance (scientific papers);
Innovative packaging solutions for integration of the developed semiconductor chips, suitable for UV-C sensing down to 200 nm wavelength, including back-side illumination option (prototype demonstration).
Our proposed approach brings significant innovation to the field, utilizing relatively green, high-deposition-rate semiconductor growth technique for solar-blind photodetectors with peak responsivity further into UV-C range. The implementation of the project will significantly enhance Latvia’s innovation capacity by developing cutting-edge photodetectors based on amorphous AlGaO thin films. This technology will open new market opportunities and strengthen the competitiveness of Latvian companies in high-value industries such as space technologies, environmental monitoring, and optoelectronics. The GoFarUV goals promotes high-value products and services, boosting energy efficiency, and advancing Latvia’s knowledge base and human capital. By fostering collaboration between a research institution and two private companies, the project will support the growth of R&D capabilities and increase Latvia’s ability to export advanced technologies.
GoFarUV is directly related to the RIS3 specialization field “Photonics and smart materials, technologies and engineering systems” and supports the sectors (Directions 1, 2 and 3) of future growth, where products and services with a high added value exist or could appear. It will promote development of innovations in several RIS3 sectors, such as C.26 and C.27 (NACE classification).
The project is related to non-economic activity, and combines fundamental and industrial research. The research team will consist of senior and young researchers, STEM students, and industry experts. The total eligible cost is 651 600 EUR with ERDF contribution of 506 049 EUR. The duration of the project is 36 months (01.06.2025 – 31.05.2028). Mid-term of the project: 18 months after the start of the project.
PROJECT PROGRESS
Time period: 01.09.2025. – 30.11.2025.
1. Optimization of the reactive DC magnetron sputtering processes of amorphous gallium oxide (aGaOx) thin films has been initiated to achieve the required photoelectric properties of the films. In the first series, samples were fabricated by adjusting the sputtering power, process pressure and oxygen partial pressure of the process. Feedback for the optimization of the sputtering processes is provided by Activities 2 and 3. (AGL Technologies, ISSP UL)
2. Physical characterization of the as-grown aGaOx films is performed using optical ellipsometry, spectrophotometry, photoluminescence and X-ray photoelectron spectroscopy. It was observed that photoluminescence in particular provides insight into the presence of defects in aGaOx films, which play an important role in the photoconductivity mechanisms. (ISSP UL)
3. Lithography masks and photodetector topography designs have been prepared for determining and characterizing photoelectric properties. A methodology for depositing electrical metal contacts on aGaOx semiconductor thin films has been established. The photoelectric properties of aGaOx thin films have been characterized for the first series of samples. (ISSP UL)
4. Testing of the chip wire-bonding processes has been carried out to select the appropriate electrical metal contact depositing procedure in Activity 3, which would be compatible with industrial standards. TO-5 type chip carriers with optical windows transparent in the UV-C range have been selected for microchip packaging. (RD ALFA Microelectronics, ISSP UL)
5. The first results of the project have been presented with an oral talk “Impact of temperature and film thickness on α- and β- phase formation in Ga2O3 thin films grown on a-plane sapphire substrate” at the international conference “8th International Workshop on Ultra-Wide Bandgap Materials and Devices IWUMD 2025”. (ISSP UL)
Time period: 01.06.2025. – 31.08.2025.
1. Preparation of the sputtering system for use in reactive dual magnetron – gallium (Ga) and aluminum (Al) – DC, RF, and HiPIMS co-sputtering configuration has been completed: preparation and testing of the vacuum system, gas supply system, sample heating system, target cooling and heating system, and creation of the necessary power supply connections for the dual magnetron configuration. The first reactive Ga and Al co-sputtering tests for obtaining amorphous AlGaOx thin films have been performed.
2. Characterization equipment has been prepared for studying the physical properties of the films, and the methodology for analyzing the properties of thin films has been verified on the first test samples.
3. Selection of semiconductor chip packaging strategies compatible with the far-UV light sensor has been initiated. Market research has been conducted on available solutions for chip carriers and optical window options with UV-C transparency. Adaptation of the probe station for photoelectric measurements in the UV range for routine characterization at the partner’s premises has been started.