Identification number: OSI_PIP_BioPhoT-2025/2-0106
Type: National Research Program - BioPhoT project
Duration: 01.03.2026. - 31.10.2026.
Project manager: Ph.D. Ainārs Ozols, Institute of Solid State Physcis, University of Latvia (ISSP UL)
ISSP UL funding: 160 000 EUR
Project description:
The project develops and validates a chemical, non-mechanical cleaning process to obtain imaging-grade, epitaxially ready GaAs for small (<1’’ mm) photocathode wafers used in infrared and night vision devices. An in-situ spectroscopic ellipsometry method will be developed and implemented to control the process and its parameter limits, supported by atomic force microscopy and X-ray photoelectron spectroscopy measurements.
The project will result in the development of a cleaning and drying process, as well as preliminary design for future industrial equipment.