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UID:calendarize-katrinas-laganovskas-promocijas-darba-prieksaizstavesana
DTSTAMP:20221107T171646Z
DTSTART:20221108T110000Z
DTEND:20221107T220000Z
SUMMARY:Katrīnas Laganovskas promocijas darba priekšaizstāvēšana
DESCRIPTION:Grāda pretendentes Katrīnas Laganovskas promocijas darba “Defects and optical properties of undoped and rare-earth doped HfO2/ZrO2” priekšaizstāvēšana notiks 8. novembrī plkst. 13.00 LU CFI Konferenču zālē.\n\nBecause of its desirable features such as a broad band gap and a high-k value\, hafnia has become a popular choice among high dielectric gate materials for CMOS applications. Hafnia has a high heat of formation as well as excellent chemical compatibility with silicon\, in addition being chemically and thermally stable.\nHowever\, compared to SiO2\, HfO2 has a higher defect concentration\, resulting in a higher density of charge traps\, transient instability of the gate threshold voltage\, coulomb scattering of carriers in the substrate channel\, and source-level voltage instability. Although HfO2 has already been successfully used in large scale manufacturing as a high-k metal gate material\, the intrinsic defects still present a significant challenge.\nTherefore the aim of this work is to study defects in HfO2 and ZrO2 using intrinsic defect luminescence\, thermostimulated luminescence and rare-earth ion luminescent probes.\nThis work presents a study on the impact of the phase of the material on the luminescent properties as well as rare-earth ion incorporation mechanisms in HfO2 and ZrO2. Furthermore\, using thermostimulated luminescence\, VO3+1\, VO3+2 and VO4+1+VO4+2 defects are identified in undoped HfO2.\nTheses:\n The distribution and concentration of oxygen vacancies determine the resulting rare-earth ion luminescence rather than the surrounding crystal symmetry Rare-earth ion luminescence can be used to control the sintering processes in ceramics VO3+1\, VO3+2 and VO4+1+VO4+2 defects were identified in monoclinic HfO2 using thermostimulated luminescence In monoclinic HfO2\, Eu3+ ions incorporate in pairs as well as single ions\, creating VO3+2 and VO3+1 oxygen vacancies.
X-ALT-DESC;FMTTYPE=text/html:Grāda pretendentes Katrīnas Laganovskas promocijas darba “Defects and optical properties of undoped and rare-earth doped HfO2/ZrO2” priekšaizstāvēšana notiks 8. novembrī plkst. 13.00 LU CFI Konferenču zālē.
\n\nBecause of its desirable features such as a broad band gap and a high-k value\, hafnia has become a popular choice among high dielectric gate materials for CMOS applications. Hafnia has a high heat of formation as well as excellent chemical compatibility with silicon\, in addition being chemically and thermally stable.
\nHowever\, compared to SiO2\, HfO2 has a higher defect concentration\, resulting in a higher density of charge traps\, transient instability of the gate threshold voltage\, coulomb scattering of carriers in the substrate channel\, and source-level voltage instability. Although HfO2 has already been successfully used in large scale manufacturing as a high-k metal gate material\, the intrinsic defects still present a significant challenge.
\nTherefore the aim of this work is to study defects in HfO2 and ZrO2 using intrinsic defect luminescence\, thermostimulated luminescence and rare-earth ion luminescent probes.
\nThis work presents a study on the impact of the phase of the material on the luminescent properties as well as rare-earth ion incorporation mechanisms in HfO2 and ZrO2. Furthermore\, using thermostimulated luminescence\, VO3+1\, VO3+2 and VO4+1+VO4+2 defects are identified in undoped HfO2.
\nTheses:
\n - The distribution and concentration of oxygen vacancies determine the resulting rare-earth ion luminescence rather than the surrounding crystal symmetry
- Rare-earth ion luminescence can be used to control the sintering processes in ceramics
- VO3+1\, VO3+2 and VO4+1+VO4+2 defects were identified in monoclinic HfO2 using thermostimulated luminescence
- In monoclinic HfO2\, Eu3+ ions \; incorporate in pairs as well as single ions\, creating VO3+2 and VO3+1 oxygen vacancies.
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