BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//TYPO3/NONSGML Calendarize//EN


BEGIN:VEVENT
UID:calendarize-pre-defense-of-katrina-laganovskas-thesis
DTSTAMP:20221107T171749Z

DTSTART:20221108T110000Z
DTEND:20221107T220000Z
    
SUMMARY:Pre-defense of Katrina Laganovska's thesis
DESCRIPTION:The pre-defense of degree applicant Katrina Laganovska's thesis "Defects and optical properties of undoped and rare-earth doped HfO2/ZrO2" will take place on November 8 at 13.00 in the Conference Hall of ISSP UL.\n\nBecause of its desirable features such as a broad band gap and a high-k value\, hafnia has become a popular choice among high dielectric gate materials for CMOS applications. Hafnia has a high heat of formation as well as excellent chemical compatibility with silicon\, in addition being chemically and thermally stable.\nHowever\, compared to SiO2\, HfO2 has a higher defect concentration\, resulting in a higher density of charge traps\, transient instability of the gate threshold voltage\, coulomb scattering of carriers in the substrate channel\, and source-level voltage instability. Although HfO2 has already been successfully used in large scale manufacturing as a high-k metal gate material\, the intrinsic defects still present a significant challenge.\nTherefore the aim of this work is to study defects in HfO2 and ZrO2 using intrinsic defect luminescence\, thermostimulated luminescence and rare-earth ion luminescent probes.\nThis work presents a study on the impact of the phase of the material on the luminescent properties as well as rare-earth ion incorporation mechanisms in HfO2 and ZrO2. Furthermore\, using thermostimulated luminescence\, VO3+1\, VO3+2 and VO4+1+VO4+2 defects are identified in undoped HfO2.\nTheses:\n 	The distribution and concentration of oxygen vacancies determine the resulting rare-earth ion luminescence rather than the surrounding crystal symmetry 	Rare-earth ion luminescence can be used to control the sintering processes in ceramics 	VO3+1\, VO3+2 and VO4+1+VO4+2 defects were identified in monoclinic HfO2 using thermostimulated luminescence 	In monoclinic HfO2\, Eu3+ ions  incorporate in pairs as well as single ions\, creating VO3+2 and VO3+1 oxygen vacancies. 
X-ALT-DESC;FMTTYPE=text/html:<p>The pre-defense of degree applicant <strong>Katrina Laganovska</strong>'s thesis <strong>"Defects and optical properties of undoped and rare-earth doped HfO2/ZrO2"</strong> will take place on November 8 at 13.00 in the Conference Hall of ISSP UL.</p>\n\n<p>Because of its desirable features such as a broad band gap and a high-k value\, hafnia has become a popular choice among high dielectric gate materials for CMOS applications. Hafnia has a high heat of formation as well as excellent chemical compatibility with silicon\, in addition being chemically and thermally stable.</p>\n<p>However\, compared to SiO<sub>2</sub>\, HfO<sub>2</sub> has a higher defect concentration\, resulting in a higher density of charge traps\, transient instability of the gate threshold voltage\, coulomb scattering of carriers in the substrate channel\, and source-level voltage instability. Although HfO<sub>2</sub> has already been successfully used in large scale manufacturing as a high-k metal gate material\, the intrinsic defects still present a significant challenge.</p>\n<p>Therefore the aim of this work is to study defects in HfO<sub>2</sub> and ZrO<sub>2</sub> using intrinsic defect luminescence\, thermostimulated luminescence and rare-earth ion luminescent probes.</p>\n<p>This work presents a study on the impact of the phase of the material on the luminescent properties as well as rare-earth ion incorporation mechanisms in HfO<sub>2</sub> and ZrO<sub>2</sub>. Furthermore\, using thermostimulated luminescence\, VO<sub>3</sub><sup>+1</sup>\, VO<sub>3</sub><sup>+2</sup> and VO<sub>4</sub><sup>+1</sup>+VO<sub>4</sub><sup>+2 </sup>defects are identified in undoped HfO<sub>2</sub>.</p>\n<p>Theses:</p>\n<ol> 	<li>The distribution and concentration of oxygen vacancies determine the resulting rare-earth ion luminescence rather than the surrounding crystal symmetry</li> 	<li>Rare-earth ion luminescence can be used to control the sintering processes in ceramics</li> 	<li>VO<sub>3</sub><sup>+1</sup>\, VO<sub>3</sub><sup>+2</sup> and VO<sub>4</sub><sup>+1</sup>+VO<sub>4</sub><sup>+2 </sup>defects were identified in monoclinic HfO<sub>2</sub> using thermostimulated luminescence</li> 	<li>In monoclinic HfO<sub>2</sub>\, Eu<sup>3+</sup> ions&nbsp\; incorporate in pairs as well as single ions\, creating VO<sub>3</sub><sup>+2</sup> and VO<sub>3</sub><sup>+1</sup> oxygen vacancies.</li> </ol>
LOCATION:
END:VEVENT

END:VCALENDAR